• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A magnetic tunneling junction (MTJ) for use in a magnetoresistive random access memory (MRAM) has a CoFeB alloy free layer located between the MgO tunneling barrier layer and an upper MgO covering layer, and a CoFeB alloy enrichment layer between the MgO overcoat layer and a Ta cap layer. The CoFeB alloy free layer has a high Fe content to induce perpendicular magnetic anisotropy (PMA) at interfaces with MgO layers. To avoid creating an unnecessary PMA in the enrichment layer because of its interface with the MgO overcoat, the enrichment layer has a low Fe content. Once all the layers have been deposited on the substrate the structure is annealed to crystallize MgO. The CoFeB alloy enrichment layer inhibits the Ta diffusion of the Ta cap layer in the MgO overcoat layer and creates good MgO crystallinity by providing CoFeB at the MgO interface.
    公开号:FR3033936A1
    申请号:FR1652157
    申请日:2016-03-15
    公开日:2016-09-23
    发明作者:Sangmun Oh；Zheng Gao；Kochan Ju
    申请人:HGST Netherlands BV；
    IPC主号:
    专利说明:

    [0001] BACKGROUND OF THE INVENTION 1 PERPENDICULAR SPIN TRANSFER TORQUE MEMORY CELL (STT) WITH A DOUBLE MgO INTERFACE AND A CoFeB LAYER FOR IMPROVING PERPENDICULAR MAGNETIC ANISOTROPY BACKGROUND OF THE INVENTION Field of the Invention [0001] The invention generally relates to a magnetoresistive spin-torque-coupled random access memory (STT-MRAM) with a perpendicular magnetic anisotropy (PMA), and more particularly the STT PMA memory cells with dual MgO interfaces. BACKGROUND OF THE INVENTION [0002] A magnetoresistive torque spin transfer torque (STT-MRAM) latch with magnetic tunnel junction (MTJ) memory cells having a perpendicular magnetic anisotropy (PMA) is a solid candidate for the future non-volatile memory. The MTJ memory cell comprises a free ferromagnetic layer (also called a recording layer or storage layer) and a ferromagnetic reference layer (also called a blocked layer) separated by a thin insulating tunneling barrier, which is typically MgO . The free and reference layers have a PMA with magnetizations oriented perpendicular to the plane of the layers. The magnetization of the reference layer is blocked, but a switching current through the MTJ causes the magnetization of the free layer to switch between the two orientations, parallel (P) or antiparallel (AP) to the magnetization of the reference layer, corresponding to resistors Rp or RAp. The tunneling magnetoresistance (TMR) of MTJ is represented as (RAp - Rp) / Rp. Figure lA is a diagram showing the two possible states of the MTJ. Figure 1B is a very schematic representation of an MRAM with a network of MTJ memory cells connected to the word and bit channels in a well-known cross point architecture. [0003] In the MTJ CoFeB / MgO / CoFeB PMAs, the PMA originates from the interface between the CoFeB 3033936 2 and the MgO and has been attributed to the hybridization of the Fe 3d and 0 2p orbitals. Since this PMA comes from the interface, there is a limitation of the thickness of the free layer, because thicker layers will exhibit anisotropy in the plane. Since the free layer of MTJ PMA with a single C0FeB / MgO interface may not provide enough PMA for high thermal stability, MTJ PMA with a C0FeB / MgO dual interface structure has been proposed. ["Properties of magnetic tunnel junctions with a MgO / CoFeB / Ta / CoFeB / MgO recording structure down to junction diameter of 11nm", H. Sato et al., Applied Physics Letters 105, 062403 (2014)]. In this structure, the CoFeB free layer is sandwiched between the MgO tunnel barrier and an upper MgO overlayer layer, with a Ta cap formed on the MgO overcoat layer. However, this type of structure requires precise growth of the MgO layers, while preventing Ta diffusion in the MgO layers during the annealing process. What is needed is a dual-interface MTJ PMA memory cell with improved PMA and prevention of Ta diffusion during annealing.
    [0002] SUMMARY OF THE INVENTION [0005] Embodiments of the present invention relate to a magnetic tunnel junction (MTJ) for use in a magnetoresistive random access memory (MRAM) with a CoFeB alloy free layer located between the MgO tunnel barrier layer and an upper MgO cover layer, and a CoFeB alloy enrichment layer between the MgO cover layer and a nonmagnetic cap, which is typically tantalum (Ta). Since the perpendicular magnetic anisotropy (PMA) comes from the interfaces between the CoFeB free layer and the two layers of MgO and has been attributed to the hybridization of the Fe 3d and O 2p orbitals, the CoFeB alloy in the layer free must have a high content of Fe, ie, preferably greater than 50 atomic percent. The CoFeB alloy enrichment layer has a specific composition substantially different from the composition of the CoFeB free layer and is deposited on the MgO overcoat layer prior to deposition of the Ta cap layer. To avoid creating unnecessary PMA in the enrichment layer due to its interface with the MgO overcoat, the enrichment layer must have a low Fe content, preferably less than 20 atomic percent. Once all the layers have been deposited as complete films on the substrate, the structure is annealed. This crystallizes the MgO and generates a high tunneling magnetoresistance (TMR). The CoFeB alloy enrichment layer, with a low Fe content, inhibits Ta diffusion from the Ta cap layer in the MgO overcoat layer and also creates good MgO crystallinity by providing CoFeB at the interface of MgO. For a more complete understanding of the nature and advantages of the present invention, reference should be made to the following detailed description taken in conjunction with the accompanying figures.
    [0003] BRIEF DESCRIPTION OF THE DRAWINGS [0007] FIG. 1A is a diagram showing the two possible states of a perpendicular magnetic anisotropy (PMA) magnetic tunnel junction memory (MTJ) cell. [0008] FIG. 1B is a very schematic representation of a magnetoresistive random access memory (MRAM) with a network of MTJ memory cells connected to the word and bit channels in a well-known crosspoint architecture. Figure 2 is a sectional view of the layers constituting the MTJ according to one embodiment of the invention. FIG. 3 illustrates parts of applied perpendicular magnetization field loops (M-H) for an MTJ structure of the prior art and two MTJ structures 20 according to one embodiment of the invention. DETAILED DESCRIPTION OF THE INVENTION [0011] FIG. 2 is a sectional view of the layers constituting the MTJ according to one embodiment of the invention. The MTJ is substantially the same as the MTJ described in the publication of Sato et al. cited above with the exception of the CoFeB alloy enrichment layer between the MgO overcoat layer and the Ta cap layer. The MTJ 100 comprises a substrate, which may be formed of any suitable material such as silicon of semiconductor quality, oxidized silicon or aluminum-titanium-carbide, a ferromagnetic reference layer 102 with a fixed magnetization 103 perpendicular to the plane of the reference layer, a ferromagnetic free layer 104 with a magnetization 105 that can be switched between parallel and antiparallel to the magnetization of the reference layer 103, and an insulating oxide barrier layer 106 which is typically MgO, between the reference layer 102 and the free layer 104. In this example, the reference layer 102 is the AP2 layer portion of an antiparallel blocking (AP) structure. An AP blocking structure is well known and comprises first (AP 1) and second (AP 2) ferromagnetic layers separated by a nonparallel antiparallel coupling layer (APC). The APC layer couples the AP1 and AP2 layers together antiferromagnetically so that their magnetizations are oriented substantially antiparallel, as shown by the magnetization of the AP2 layer 103 and the magnetization of the AP1 layer 107. In this example the APC layer is an 8A Ru layer and the AP1 layer is a well-known [Co / Pt] n multilayer, where "n" refers to the number of Co / Pt pairs. The AP2 layer (reference layer 102) is a lower [Co / Pt] n multilayer 110, an upper CoFeB layer 112 and a Ta 114 break layer between the layers 110 and 112. [Co / Pt multilayers n are well known for having perpendicular magnetic anisotropy. A seed layer, in this example a Ta / Pt bilayer, is formed on the substrate prior to the deposition of the AP 1 multilayer. [0014] Although the embodiment of the invention has been described for a MTJ of the reference layer as part of an AP blocking structure, the invention is fully applicable to other types of reference layers. For example, the reference layer may be a "simple" blocking structure, such as a single CoFeB alloy layer whose magnetization is blocked by an antiferromagnetic layer. The MTJ 100 is a MTJ with a double MgO layer in that the CoFeB 104 free alloy layer is located between the MgO 106 tunneling barrier layer and an upper MgO covering layer 130. PMA comes from the interface between CoFeB 3033936 5 and MgO. Since the anisotropy is purely interfacial in nature, the CoFeB alloy free layer should be thin, generally less than about 12 Å, to retain PMA because a thicker CoFeB layer will exhibit anisotropy in the plane. Thus, to have a high and high PMA with a thicker CoFeB layer, the second MgO layer (the MgO overlay layer) provides a second interface. The free layer 104 consists, in this example, of two CoFeB films 120, 122 separated by a non-magnetic separation film 124, such as Ta, each CoFeB film having a thickness preferably in the range from 5 to 15 Â. The Ta 124 separation film creates two thinner CoFeB films, each of which has an interface with a layer of MgO 10 to create the PMA. Since PMA comes from the interface between CoFeB and MgO and has been attributed to the hybridization of the Fe 3d and O 2p orbitals, the CoFeB alloy in the free layer must have a high Fe content. Thus, the composition of the CoFeB alloy in the free layer 104 should preferably have the composition (C0000-jex) (ioo-y) By, where x is in atomic percent and is greater than or equal to 25 (preferably greater than 50) and less than or equal to 95, and y is in atomic percent and is greater than or equal to 10 and less than or equal to 30. [0016] In the present invention, an alloying enrichment layer of CoFeB 140, with a specific composition substantially different from the composition of the free CoFeB layer 104, is deposited on the MgO 130 cover layer prior to the deposition of the Ta 150 cap layer. To avoid creating a useless PMA in the enrichment layer 140 because of its interface with the covering layer of MgO 130, the enrichment layer 140 must have a low Fe content. The composition of the CoFeB alloy in the enrichment layer 140 must therefore preferably have the composition (C0000-jex) ( ioo-y) By, where x is in atomic percent and is greater than or equal to 4 and less than or equal to 20, and y is atomic percent and is greater than or equal to 15 and less than or equal to 25. enrichment layer 140 has a thickness preferably in the range of 3 to 10 Å. Once all the layers have been deposited as complete films on the substrate, the structure is annealed, usually at a temperature between about 350-3-0 400 ° C for a period between about 30 and 60 minutes. This crystallizes MgO 3033936 and generates a high TMR. However, in the prior art MTJ without the enrichment layer according to the present invention, annealing can cause Ta diffusion in the MgO layer, which would alter the crystallinity of the MgO and reduce the free layer PMA. of CoFeB alloy. However, in the present invention, the CoFeB 140 alloy enrichment layer 140, with a low Fe content, inhibits the Ta diffusion of the Ta 150 cap layer in the MgO 130 cover layer and also creates good MgO crystallinity by providing CoFeB at the MgO interface. Figure 3 illustrates portions of three magnetization field loops (M-H) for three different MTJ structures. The loop 200 is a prior art MTJ structure without the CoFeB alloy enrichment layer and thus with the Ta cap 150 in contact with the MgO overcoat layer. Loop 210 is a MTJ structure with a CoA3Fe4B20 alloy enrichment layer of 3 Å 140 between the Ta 150 cap and the MgO 130 cover layer. The loop 220 is a MTJ structure with a coating of Enrichment of the Co76Fe4B20 alloy of 5 Å 140 between the Ta 150 cap and the MgO 130 overlay layer. The slope of the MH 200 loop is very low, indicating a low PMA and therefore a low TMR. However, the loops 210 and 220 are substantially steeper, and increase with increasing enrichment layer thickness from 3Å to 5Å. Although the present invention has been particularly shown and described with reference to the preferred embodiments, it will be understood by those skilled in the art that various variations of form and detail may be made without departing from the scope of the present invention. spirit and scope of the invention. Accordingly, the disclosed invention is to be considered merely illustrative and limited in scope only as specified in the appended claims.
    权利要求:
    Claims (13)
    [0001]
    REVENDICATIONS1. A magnetic tunnel junction memory cell comprising: a substrate; a ferromagnetic reference layer having a magnetic anisotropy perpendicular to the substrate, the reference layer having a fixed magnetization substantially perpendicular to the plane of the reference layer; a ferromagnetic free layer comprising Co, Fe and B, and having a perpendicular magnetic anisotropy, the free layer having a magnetization substantially perpendicular to the plane of the free layer and being switchable between substantially parallel and substantially antiparallel to the magnetization of the reference layer; an insulating oxide tunneling barrier layer between the reference layer and the free layer; an insulating oxide coating layer on and in contact with the free layer; a ferromagnetic enrichment layer on and in contact with the insulating oxide coating layer and comprising Co, Fe and B; and a non-magnetic cap layer on the enrichment layer.
    [0002]
    The memory cell of claim 1, wherein the insulating oxide tunneling barrier layer and the insulating oxide covering layer are each made of MgO. 20
    [0003]
    The memory cell of claim 1, wherein the nonmagnetic cap layer is Ta. 3033936 8
    [0004]
    The memory cell of claim 1, wherein the free layer comprises first and second CoFeB alloy films and a nonmagnetic separation film between said first and second CoFeB alloy films.
    [0005]
    The memory cell of claim 4, wherein each of the first and second CoFeB alloy films has a thickness greater than or equal to 5Å and less than or equal to 15Å.
    [0006]
    The memory cell of claim 1, wherein the free layer is composed of a CoFeB alloy having a composition of the formula (Co (100) Fex) (100_y) By, where x is atomic percent and is greater than or equal to 25 and less than or equal to 95, and y is in atomic percent and is greater than or equal to 15 and less than or equal to 25.
    [0007]
    The memory cell of claim 1, wherein the enhancement layer has a composition of the formula (Co (100-jex) (100-y) By, where x is at atomic percent and is greater than or equal to 4 and less than or equal to 20, and y is in atomic percent and is greater than or equal to 15 and less than or equal to 25.
    [0008]
    8. The memory cell of claim 1, wherein the enrichment layer has a thickness greater than or equal to 3 Å and less than or equal to 10 Å.
    [0009]
    The memory cell of claim 1, wherein the memory cell comprises an antiparallel blocking (AP) structure comprising a first AP locking ferromagnetic layer (AP1) having a magnetization perpendicular to the plane, a second AP locking ferromagnetic layer. (AP2) having a magnetization perpendicular to the plane substantially antiparallel to the magnetization of the API layer, and an AP coupling layer (APC) between and in contact with the AP1 and AP2 layers, wherein the AP2 layer comprises said reference layer . 3033936 9
    [0010]
    A magnetic random access memory (MRAM) comprising an array of memory cells according to claim 1, a plurality of bit channels connected to the memory cells, and a plurality of word channels connected to the memory cells.
    [0011]
    A magnetic tunnel junction memory cell comprising: a substrate; a ferromagnetic reference layer comprising a CoFeB alloy on the substrate and having a perpendicular magnetic anisotropy, the reference layer having a fixed magnetization substantially perpendicular to the plane of the reference layer; a ferromagnetic free layer having a perpendicular magnetic anisotropy, the free layer having a magnetization substantially perpendicular to the plane of the free layer and switchable between substantially parallel and substantially antiparallel to the magnetization of the reference layer, the free layer comprising first and second CoFeB alloy films and a nonmagnetic separation film between said first and second CoFeB alloy films; An insulating MgO tunnel barrier layer between the reference layer and the free layer; an insulating MgO overcoat layer on and in contact with the free layer; a ferromagnetic enrichment layer on and in contact with the insulating MgO overcoating layer, the enrichment layer having a composition of the formula (Co (loo_x) Fex) (ioo-y) By, where x is in for atomic percent and is greater than or equal to 4 and less than or equal to 20, and y is in atomic percent and is greater than or equal to 15 and less than or equal to 25; and a Ta cap layer on the enrichment layer. 3033936 10
    [0012]
    The memory cell as claimed in claim 11, wherein the enrichment layer has a thickness greater than or equal to 3 Å and less than or equal to 10 A.
    [0013]
    The memory cell of claim 11, wherein the memory cell comprises an antiparallel blocking (AP) structure comprising a first AP locked ferromagnetic layer (AP1) having a magnetization perpendicular to the plane, a second ferromagnetic blocking layer. AP (AP2) having a magnetization perpendicular to the plane substantially antiparallel to the magnetization of the API layer, and an AP coupling layer (APC) between and in contact with the AP1 and AP2 layers, wherein the AP2 layer comprises said layer of reference.
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    法律状态:
    2017-03-22| PLFP| Fee payment|Year of fee payment: 2 |
    2018-02-23| PLFP| Fee payment|Year of fee payment: 3 |
    2019-11-29| ST| Notification of lapse|Effective date: 20191106 |
    优先权:
    申请号 | 申请日 | 专利标题
    US14/664,644|US9337415B1|2015-03-20|2015-03-20|Perpendicular spin transfer torquememory cell with double MgO interface and CoFeB layer for enhancement of perpendicular magnetic anisotropy|
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